Photoluminescence study of in situ annealed InAs quantum dots: Double-peak emission associated with bimodal size distribution
Identifieur interne : 015887 ( Main/Repository ); précédent : 015886; suivant : 015888Photoluminescence study of in situ annealed InAs quantum dots: Double-peak emission associated with bimodal size distribution
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Abstract
We report a photoluminescence study of self-assembled InAs islands subjected to in situ annealing prior to the growth of a capping layer. A distinctive double-peak feature is observed in the photoluminescence spectra of annealed samples. The power dependence of the photoluminescence spectra reveals that the double-peak emission is associated with the ground-state transition of islands in two different size branches. This observation agrees with a previous study, which demonstrated that the InAs island size distribution bifurcates during post-growth annealing. The temperature dependence of the photoluminescence intensities from samples with bimodal island size distributions illustrates that different thermal activation energies for carrier emission are associated with islands in different size branches. © 1998 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Photoluminescence study of in situ annealed InAs quantum dots: Double-peak emission associated with bimodal size distribution</title><author><name sortKey="Lee, Hao" uniqKey="Lee H">Hao Lee</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, Materials Science Institute, and Oregon Center for Optics, University of Oregon, Eugene, Oregon 97403</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oregon</region></placeName><wicri:cityArea>Department of Physics, Materials Science Institute, and Oregon Center for Optics, University of Oregon, Eugene</wicri:cityArea></affiliation></author><author><name sortKey="Lowe Webb, Roger" uniqKey="Lowe Webb R">Roger Lowe Webb</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, Materials Science Institute, and Oregon Center for Optics, University of Oregon, Eugene, Oregon 97403</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oregon</region></placeName><wicri:cityArea>Department of Physics, Materials Science Institute, and Oregon Center for Optics, University of Oregon, Eugene</wicri:cityArea></affiliation></author><author><name sortKey="Johnson, Thomas J" uniqKey="Johnson T">Thomas J. Johnson</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, Materials Science Institute, and Oregon Center for Optics, University of Oregon, Eugene, Oregon 97403</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oregon</region></placeName><wicri:cityArea>Department of Physics, Materials Science Institute, and Oregon Center for Optics, University of Oregon, Eugene</wicri:cityArea></affiliation></author><author><name sortKey="Yang, Weidong" uniqKey="Yang W">Weidong Yang</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, Materials Science Institute, and Oregon Center for Optics, University of Oregon, Eugene, Oregon 97403</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oregon</region></placeName><wicri:cityArea>Department of Physics, Materials Science Institute, and Oregon Center for Optics, University of Oregon, Eugene</wicri:cityArea></affiliation></author><author><name sortKey="Sercel, Peter C" uniqKey="Sercel P">Peter C. Sercel</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, Materials Science Institute, and Oregon Center for Optics, University of Oregon, Eugene, Oregon 97403</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oregon</region></placeName><wicri:cityArea>Department of Physics, Materials Science Institute, and Oregon Center for Optics, University of Oregon, Eugene</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">98-0527979</idno><date when="1998-12-14">1998-12-14</date><idno type="stanalyst">PASCAL 98-0527979 AIP</idno><idno type="RBID">Pascal:98-0527979</idno><idno type="wicri:Area/Main/Corpus">015E93</idno><idno type="wicri:Area/Main/Repository">015887</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Annealing</term><term>Experimental study</term><term>Ground states</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Island structure</term><term>Photoluminescence</term><term>Self assembly</term><term>Semiconductor quantum dots</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7855C</term><term>7866F</term><term>6865</term><term>6172C</term><term>8105E</term><term>Etude expérimentale</term><term>Point quantique semiconducteur</term><term>Indium composé</term><term>Semiconducteur III-V</term><term>Autoassemblage</term><term>Photoluminescence</term><term>Recuit</term><term>Etat fondamental</term><term>Structure îlot</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We report a photoluminescence study of self-assembled InAs islands subjected to in situ annealing prior to the growth of a capping layer. A distinctive double-peak feature is observed in the photoluminescence spectra of annealed samples. The power dependence of the photoluminescence spectra reveals that the double-peak emission is associated with the ground-state transition of islands in two different size branches. This observation agrees with a previous study, which demonstrated that the InAs island size distribution bifurcates during post-growth annealing. The temperature dependence of the photoluminescence intensities from samples with bimodal island size distributions illustrates that different thermal activation energies for carrier emission are associated with islands in different size branches. © 1998 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>73</s2></fA05><fA06><s2>24</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Photoluminescence study of in situ annealed InAs quantum dots: Double-peak emission associated with bimodal size distribution</s1></fA08><fA11 i1="01" i2="1"><s1>LEE (Hao)</s1></fA11><fA11 i1="02" i2="1"><s1>LOWE WEBB (Roger)</s1></fA11><fA11 i1="03" i2="1"><s1>JOHNSON (Thomas J.)</s1></fA11><fA11 i1="04" i2="1"><s1>YANG (Weidong)</s1></fA11><fA11 i1="05" i2="1"><s1>SERCEL (Peter C.)</s1></fA11><fA14 i1="01"><s1>Department of Physics, Materials Science Institute, and Oregon Center for Optics, University of Oregon, Eugene, Oregon 97403</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA20><s1>3556-3558</s1></fA20><fA21><s1>1998-12-14</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 1998 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>98-0527979</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>We report a photoluminescence study of self-assembled InAs islands subjected to in situ annealing prior to the growth of a capping layer. A distinctive double-peak feature is observed in the photoluminescence spectra of annealed samples. The power dependence of the photoluminescence spectra reveals that the double-peak emission is associated with the ground-state transition of islands in two different size branches. This observation agrees with a previous study, which demonstrated that the InAs island size distribution bifurcates during post-growth annealing. 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